NSN 5962-01-109-8747

Part Details | MEMORY MICROCIRCUIT

5962-01-109-8747 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.

Alternate Parts: 5874490118, 58744-90118, 5874490, 58744-90, 16591703, 165917-03, 18180990, 1818-0990, HM165148, HM1-6514-8, HM165148, HM1-6514-8, IM6514DMNB, IM6514DMN/B, NMC6514J2883B, NMC6514J-2/883B, 3518590012, 351-8590-012, 0337403, 033740-3, 5962-01-109-8747, 01-109-8747, 5962011098747, 011098747

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAR 22, 198101-109-874741015 ( MICROCIRCUIT, MEMORY )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-109-8747
Part Number Cage Code Manufacturer
58744-9011897384AAI CORPORATIONDBA TEXTRON SYSTEMS
58744-9097384AAI CORPORATIONDBA TEXTRON SYSTEMS
165917-0335351GE AVIATION SYSTEMS LLC
1818-099028480HEWLETT-PACKARD COMPANYDBA HP
HM1-6514-81MY79INTERSIL COMMUNICATIONS INC.
HM1-6514-834371INTERSIL CORPORATIONDIV NA
IM6514DMN/B32293INTERSIL INCSUB OF GENERAL ELECTRIC CO
NMC6514J-2/883B27014NATIONAL SEMICONDUCTOR CORPORATION
351-8590-01213499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
033740-389305SIMMONDS PRECISION PRODUCTS INC
Technical Data | NSN 5962-01-109-8747
Characteristic Specifications
OUTPUT LOGIC FORM COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
INPUT CIRCUIT PATTERN 12 INPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTICACV8.0 VOLTS MAXIMUM
TIME RATING PER CHACTERISTICAEE300.00 NANOSECONDS MAXIMUM AND AED300.00 NANOSECONDS MAXIMUM
MEMORY DEVICE TYPE RAM
MEMORY CAPACITYUNKNOWN
OPERATING TEMP RANGE+0.0 TO +75.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT
TERMINAL SURFACE TREATMENT SOLDER
INCLOSURE CONFIGURATION DUAL-IN-LINE
INCLOSURE MATERIAL PLASTIC
BODY LENGTH0.890 INCHES MAXIMUM
BODY HEIGHT0.155 INCHES NOMINAL
BODY WIDTH0.290 INCHES MAXIMUM
MAXIMUM POWER DISSIPATION RATING1.0 MILLIWATTS
STORAGE TEMP RANGE-65.0 TO +150.0 DEG CELSIUS
FEATURES PROVIDED MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND SYNCHRONOUS AND W/ENABLE