Part Details | MEMORY MICROCIRCUIT
5962-01-292-9196 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.
Alternate Parts: 9931BCWX, 9931-BCWX, 9931BCWX, 9931-BCWX, ROMPROM FAMILY 081, ROM/PROM FAMILY 081, M3851050305BRA, M38510/50305BRA, 5962-01-292-9196, 01-292-9196, 5962012929196, 012929196
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 24, 1989 | 01-292-9196 | 41015 ( MICROCIRCUIT, MEMORY ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-292-9196
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 9931-BCWX | K0656 | BAE SYSTEMS (OPERATIONS) LIMITEDDBA BAE SYSTEMS PLC |
| 9931-BCWX | 33827 | BAE SYSTEMS INTEGRATED DEFENSESOLUTIONS INC. |
| ROM/PROM FAMILY 081 | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| M38510/50305BRA | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
Technical Data | NSN 5962-01-292-9196
| Characteristic | Specifications |
|---|---|
| OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| INPUT CIRCUIT PATTERN | 16 INPUT |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | ACV7.0 VOLTS MAXIMUM |
| TIME RATING PER CHACTERISTIC | AEE45.00 NANOSECONDS MAXIMUM AND AED45.00 NANOSECONDS MAXIMUM |
| MEMORY DEVICE TYPE | PAL |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
| BODY LENGTH | 1.060 INCHES MAXIMUM |
| BODY HEIGHT | 0.185 INCHES MAXIMUM |
| BODY WIDTH | 0.310 INCHES MAXIMUM |
| MAXIMUM POWER DISSIPATION RATING | 2.0 WATTS |
| STORAGE TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
| FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND PROGRAMMABLE AND BIPOLAR AND ELECTROSTATIC SENSITIVE |