Part Details | LIGHT EMITTING DIODE
5980-01-071-6730 A two electrode, solid state, optoelectronic device that emits visible or infrared radiant energy when electrically energized. May or may not include mounting hardware and/or heat sink. Excludes LAMP, CARTRIDGE; and LIGHT, INDICATOR. For solid state devices which are responsive to infrared or radiant energy, see SEMICONDUCTOR DEVICE (1), PHOTO.
Alternate Parts: LED55B, 381010091001, 38101009-1001, SG1009, 5980-01-071-6730, 01-071-6730, 5980010716730, 010716730
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 13, 1979 | 01-071-6730 | 32371 ( LIGHT EMITTING DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5980-01-071-6730
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| LED55B | 03508 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| 38101009-1001 | 50163 | GENICOM CORP |
| SG1009 | 34371 | INTERSIL CORPORATIONDIV NA |
Technical Data | NSN 5980-01-071-6730
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE |
| INTERNAL CONFIGURATION | POINT CONTACT |
| INTERNAL JUNCTION CONFIGURATION | PN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 3.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS |
| CURRENT RATING PER CHARACTERISTIC | AF100.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | AF3.5 MILLIWATTS NOMINAL |
| COLOR TONE PRODUCED PER SOURCE | INFRARED SEMICONDUCTOR |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL AND GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.255 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | INFRARED EMITTING |