NSN 5980-01-369-3718

Part Details | LIGHT EMITTING DIODE

5980-01-369-3718 A two electrode, solid state, optoelectronic device that emits visible or infrared radiant energy when electrically energized. May or may not include mounting hardware and/or heat sink. Excludes LAMP, CARTRIDGE; and LIGHT, INDICATOR. For solid state devices which are responsive to infrared or radiant energy, see SEMICONDUCTOR DEVICE (1), PHOTO.

Alternate Parts: MF200R286BP, MF200-R28-6-BP, SP910517R, SP910517-R, 4386404487 FIND NO.37, 438-6404487 FIND NO.37, 438640447444, 438-6404474-44, 438640447316, 438-6404473-16, 438640447238, 438-6404472-38, 438640447113, 438-6404471-13, 0405025, 0405-025, 5980-01-369-3718, 01-369-3718, 5980013693718, 013693718

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59DEC 22, 199201-369-371832371 ( LIGHT EMITTING DIODE )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5980-01-369-3718
Part Number Cage Code Manufacturer
MF200-R28-6-BP15513DISPLAY PRODUCTS INC.DBA DATA DISPLAY PRODUCTS
SP910517-R8Z410LEDTRONICS, INC.
438-6404487 FIND NO.3753711NAVAL SEA SYSTEMS COMMAND
438-6404474-4453711NAVAL SEA SYSTEMS COMMAND
438-6404473-1653711NAVAL SEA SYSTEMS COMMAND
438-6404472-3853711NAVAL SEA SYSTEMS COMMAND
438-6404471-1353711NAVAL SEA SYSTEMS COMMAND
0405-02592772WHITMOR COMPANY, INC., THE
Technical Data | NSN 5980-01-369-3718
Characteristic Specifications
SEMICONDUCTOR MATERIAL GALLIUM ARSENIDE PHOSPHIDE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC28.0 NOMINAL FORWARD VOLTAGE, DC
CURRENT RATING PER CHARACTERISTICAF14.00 MILLIAMPERES NOMINAL
POWER RATING PER CHARACTERISTICAG220.0 MILLIWATTS MAXIMUM
COLOR TONE PRODUCED PER SOURCE RED SEMICONDUCTOR
LUMINOUS INTENSITY29.0 MILLICANDELA NOMINAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT60.0 DEG CELSIUS AMBIENT AIR
INCLOSURE MATERIAL METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONT-1 3/4
MOUNTING METHOD PRESS FIT
TERMINAL TYPE AND QUANTITY2 CASE
OVERALL LENGTH0.620 INCHES MAXIMUM
OVERALL DIAMETER0.280 INCHES NOMINAL
SPECIAL FEATURESBIPOLAR, MULTI-CHIP CONSTRUCTION